首页> 外文OA文献 >Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: valence band reordering and excitonic binding energies

【2h】

Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: valence band reordering and excitonic binding energies

机译：GaN / Al _{x Ga _{1-x N量子阱的磁光致发光：价带重排和激子结合能}}

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Massies J; Grandjean N; Shields P A; Nicholas R J;
展开▼
作者单位

展开▼
年度 2001
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies - art. no. 245319 [J] . Shields PA., Grandjean N., Massies J., Physical Review, B. Condensed Matter . 2001,第24期

机译：GaN / AlxGa1-xN量子阱的磁光致发光：价带重排和激子结合能-艺术。没有。 245319
2. Pressure-dependent reordering of valence band states in GaN/Al_xGa_(1-x)N quantum wells [J] . W. Bardyszewski, S. P. Lepkowski Physical review . 2012,第3期

机译：GaN / Al_xGa_（1-x）N量子阱中价带态的压力依赖性重排
3. A method for evaluating the ground state excitonic band gaps of strained In_xGa_(1-x)N/GaN quantum wells [J] . T. K. Sharma, E. Towe Journal of Applied Physics . 2009,第10期

机译：应变In_xGa_（1-x）N / GaN量子阱基态激子能带隙的评估方法
4. Effect of Strain on the Band Offsets of III-V Quantum Wells: In_xGa_(1-x)P/GaAs, In_xGa_(1-x)As/ Al_(0.2)Ga_(0.8)As and In_xGa_(1-x)N/GaN [C] . Tapas Das, Siddhartha Panda, Partha Pratim Bera, CODEC 2012 . 2012

机译：菌株对III-V量子阱的带偏移的影响：IN_XGA_（1-x）P / GAA，IN_XGA_（1-x）AS / AL_（0.2）GA_（0.8）AS和IN_XGA_（1-x）n /甘
5. Spectroscopic study of hafnium silicate alloys prepared by RPECVD: Comparisons between conduction/valence band offset energies and optical band gaps. [D] . Hong, Joon Goo. 2004

机译：RPECVD制备的硅酸alloy合金的光谱研究：导带/价带偏移能和光学带隙的比较。
6. Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well [O] . Jun Wang, Shu-Shen Li, Yan-Wu Lü, 2009

机译：AlGaN / GaN三角形电势量子阱中氢供体杂质的结合能和自旋轨道分裂
7. Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies [O] . Shields, PA, Nicholas, RJ, Grandjean, N, 2001

机译：GaN / AlxGa1-xN量子阱的磁光致发光：价带重排和激子结合能

Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: valence band reordering and excitonic binding energies

著录项

引文网络

相似文献

相关主题

期刊订阅

Magnetophotoluminescence of GaN/Al_xGa_1-xN quantum wells: valence band reordering and excitonic binding energies